THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue

Theory of C―U profiling of a nonuniformly doped semiconductorSIKORSKI, S.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 265-274, issn 0031-8965Article

Contribution à l'étude des structures électroniques des supraconducteurs en couches par spectroscopie d'absorption X = Electronic structure of HTC layered superconductors by X-ray absorption spectroscopyMerrien, Nathalie; Studer, Francis.1992, 225 p.Thesis

Photo-generated carriers in structures with nonlinear band-gap changesOSINSKII, V. I; MALYSHEV, S. A; MELNIKOV, S. L et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp 283-292, issn 0031-8965Article

Influence of anneal temperature on the mobile ion concentration in MOS structuresGREEUW, G; BAKKER, S; VERWEY, J. F et al.Solid-state electronics. 1984, Vol 27, Num 1, pp 77-81, issn 0038-1101Article

Useful relations for highly sensitive sensors based on carrier concentrationCHOVET, A; CRISTOLOVEANU, S; DAHER, Y et al.Physica status solidi. A. Applied research. 1983, Vol 76, Num 1, pp K43-K48, issn 0031-8965Article

Measurements of threshold carrier density of III-V semiconductor laser diodesSU, C. B; OLSHANSKY, R.Applied physics letters. 1983, Vol 43, Num 9, pp 856-858, issn 0003-6951Article

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Voltage drop in the experiments of scanning tunneling microscopy for SiFLORES, F; GARCIA, N.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2289-2291, issn 0163-1829Article

Magnétoconductivité longitudinale dans les semiconducteurs à superréseau. IIPOLYANOVSKIJ, V. M.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1827-1831, issn 0015-3222Article

Concentration effects on charge transport in dye doped polymer light emitting diodesNUNZI, J.-M; GAUTIER-THIANCHE, E; LORIN, A et al.SPIE proceedings series. 1998, pp 302-309, isbn 0-8194-2720-9Conference Paper

Electron concentration dependent fractional quantisation in a two dimensional systemCLARK, R. G; NICHOLAS, R. J; BRUMMELL, M. A et al.Solid state communications. 1985, Vol 56, Num 2, pp 173-176, issn 0038-1098Article

The enhancement of exclusion effect in compensated semiconductors under the action of impurity illumination generating minority current carriersARONOV, D. A; KNIGIN, P. I; MAMATKULOV, B. R et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp 683-691, issn 0031-8965Article

Thermogradient magnetoconcentration effectKONIN, A. M; SASCIUK, A. P.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp K55-K58, issn 0031-8965Article

Discretization error in MOSFET device simulationTANIMOTO, H; SHIGYO, N.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 7, pp 921-925, issn 0278-0070Article

Modelling the static property of carrier density variation in directly modulated lasersMUHAMMAD TAHER ABUELMA'ATTI.International journal of infrared and millimeter waves. 1989, Vol 10, Num 1, pp 63-71, issn 0195-9271, 9 p.Article

Spectral density due to the fluctuation of the total number of carriers in a semiconductorSUH, C. H.Journal of applied physics. 1985, Vol 57, Num 2, pp 318-321, issn 0021-8979Article

Raman scattering by intervalley carrier-density fluctuations in n-type Si: intervalley and intravalley mechanismsCONTRERAS, G; SOOD, A. K; CARDONA, M et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 924-929, issn 0163-1829Article

DIE TRAGERDICHTE VON EIGENLEITENDEM SILIZIUM. = CONCENTRATION EN PORTEURS DANS LE SILICIUM INTRINSEQUEWASSERRAB T.1976; Z. NATURFORSCH., A; DTSCH.; DA. 1976; VOL. 31; NO 5; PP. 505-506; ABS. ANGL.; BIBL. 11 REF.Article

OXYDATION THERMIQUE DU SILICIUM A DIFFERENTES DENSITES D'IMPURETES DOPANTES ET DE DISLOCATIONSARIFOV AA; SAFAROV A.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 3; PP. 244-247; BIBL. 8 REF.Article

LOW CURRENT BASE-COLLECTOR BOUNDARY CONDITIONS IN GHZ FREQUENCY TRANSISTORS.ROULSTON DJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 845-847; BIBL. 5 REF.Article

FORME ASYMPTOTIQUE DE QUASI-DERIVE DE LA FONCTION DE DISTRIBUTION DANS LES SEMICONDUCTEURSGRIBNIKOV ZS.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1372-1379; BIBL. 5 REF.Article

PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE CRYSTALS.CHIANG SY; PEARSON GL.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 2986-2991; BIBL. 20 REF.Article

VARIATION THERMIQUE DE LA CONCENTRATION DES PORTEURS DE CHARGE POUR DES NIVEAUX D'IMPURETES DANS LES BANDES PERMISESBARISS VO; KLOTYN'SH EH EH.1975; LATV. P.S.R. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1975; NO 5; PP. 25-29; ABS. ANGL.; BIBL. 5 REF.Article

CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN TELLURIUM TAKING ANISOTROPY INTO ACCOUNT.CHAMPNESS CH.1976; CANAD. J. PHYS.; CANADA; DA. 1976; VOL. 54; NO 9; PP. 967-969; ABS. FR.; BIBL. 11 REF.Article